AN-5232 — New Generation Super-Junction MOSFETs, SuperFET® II and SuperFET® II Easy Drive MOSFETs for High Efficiency and Lower Switching Noise

Power MOSFET technology has developed toward higher cell density for lower on-resistance. The super-junction device utilizing charge balance theory was introduced to semiconductor industry ten years ago and it set a new benchmark in the high-voltage power MOSFET market [1] . The Super-Junction (SJ) MOSFETs enable higher power conversion efficiency. However, the extremely fast switching performance of super-junction MOSFETs creates unwanted side effects, like high voltage or current spikes or poor EMI performance. Based on recent system trends, improving efficiency is a critical goal and using a slow switching device just for EMI is not an optimized solution. Fairchild recently added a SuperFET ® II MOSFET family using the latest super-junction technology to the highvoltage power MOSFET portfolio. With this technology, Fairchild provides high performance in high-end, AC-DC SMPS applications such as servers, telecom, computing, industrial power supply, UPS/ESS, solar inverter, and lighting applications; as well as consumer electronics, which require high power density, system efficiency, and reliability. Utilizing an advanced charge-balance technology, Fairchild helps designers achieve more efficient and high-performance solutions that consume less board space and improve EMI and reliability by introducing the 600 V N-channel SuperFET ® II MOSFET family.